The Microwave Electronics Laboratory (MEL), situated within the Department of Microtechnology and Nanoscience, comprises a team of over 40 individuals engaged in cutting-edge research on high-speed electronic components, circuits, and systems. Our research spans a broad spectrum of communication and sensing applications, encompassing frequencies ranging from 1 GHz to 500 GHz and beyond. Within our facilities, we are proud to possess a remarkably well-equipped laboratory for advanced millimeter-wave measurements, alongside a state-of-the-art cleanroom facility.
A significant portion of our research endeavors is directed towards exploring novel semiconductor materials and devices. These innovations aim to facilitate increased capacity and enhanced energy efficiency across a diverse array of future microwave and millimeter systems. In recent years, we have witnessed remarkable advancements in electronic devices and circuits employing wide bandgap semiconductors like SiC and III-nitrides (GaN). These materials have demonstrated transformative performance capabilities in terms of frequency, power, and efficiency metrics.
Moving forward, our focus centers on investigating advanced device concepts that can unlock the full potential of III-nitride devices and circuits. Our research into GaN HEMT technology is tailored for applications within wireless communication, radar systems, and power electronics, with the goal of pushing the boundaries of performance in these domains.
PhD Project Description
The primary focus of this Ph.D. position revolves around conducting research on III-nitride devices and circuits tailored for high-frequency applications. Our endeavor entails the exploration of innovative concepts in III-nitride semiconductor materials and device processing. The aim is to enhance various crucial properties, including high-frequency operation, output power, linearity, and efficiency, all of which hold significant importance in high-frequency systems. Our overarching objective is to push the boundaries of III-nitride semiconductor devices. We will employ newly devised epitaxial designs cultivated in-house through molecular beam epitaxy or in collaboration with our partners. Specifically, we will work with a particular type of transistors, known as high electron mobility transistors (HEMTs). These HEMTs will undergo processing, characterization, and evaluation to optimize their high-frequency performance, necessitating both aggressive lateral and vertical scaling of critical transistor features.
The research agenda will encompass a diverse array of activities, encompassing epitaxial design, device processing, and comprehensive characterization. Your role will entail conducting extensive experimental and theoretical inquiries to gain insights into the fundamental and practical limits of high-frequency electronics reliant on III-nitride semiconductors. You will have access to our advanced device processing and characterization facilities, facilitating the correlation of theoretical predictions with empirical validation.
As a member of a collaborative team, you will collaborate with fellow Ph.D. students and senior researchers from both industry and academia. Together, you will be engaged in semiconductor technology development, circuit design, and the realization of complete microwave system prototypes. While your primary responsibilities will involve research and supervision, there will also be opportunities for collaborative endeavors with our partners.
Qualification
To be eligible, you should possess a Master of Science (MSc) degree in physics or electrical engineering, or an equivalent qualification, typically obtained within the past two years. Previous involvement in semiconductor processing within cleanroom environments and experience in device characterization would be advantageous. Proficiency in English, both spoken and written, supported by well-documented evidence, is a mandatory requirement.
Key attributes we value include enthusiasm, the ability to independently drive and successfully conclude projects, a proactive approach to initiating tasks and developing original ideas, creativity, and a problem-solving orientation. The project involves collaboration with fellow researchers and industry partners, underscoring the significance of strong interpersonal and teamwork skills.
How to Apply
The application is only to be submitted online by using the"Apply online" button below. Please be notified that application deadline is
11 October 2023. For further information related to the PhD scholarships, please visit the following
Scholarship Link.
For questions, please contact:
Research professor Niklas Rorsman, Microtechnology and nanoscience,
niklas.rorsman@chalmers.se, +46 31 7725053
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